 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SD1660 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS .860 .24 .CLASS .I .DESI .HI .GOLD .DI .COMMON .P - 900 MHz VOLTS AB PUSH PULL N TERNAL INPUT MATCHING GNED FOR HIGH POWER LINEAR OPERATION GH SATURATED POWER CAPABILITY METALLIZATION FOR HIGH RELIABILITY FFUSED EMITTER BALLAST RESISTORS EMITTER CONFIGURATION OUT = 120 W MIN. WITH 6.0 dB GAIN 2 x .437 x .450 2LFL (M175) epoxy sealed ORDER CODE SD1660 BRANDING SD1660 PIN CONNECTION DESCRIPTION The SD1660 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station applications. ABSOLUTE MAXIMUM RATINGS (T case = 25 C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 60 30 3.0 25 310 +200 - 55 to +150 V V V A W C C THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 0.55 C/W 1/7 SD1660 ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCEO BVEBO ICES hFE Tested Per Side IC = 100mA IC = 100mA IE = 50mA VCE = 28V VCE = 5V IE = 0mA IB = 0mA IC = 0mA IE = 0mA IC = 3A 60 30 3.0 -- 15 -- -- -- -- -- -- -- -- 10 70 V V V mA -- DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT * G P* IMD** c COB Note: f = 900 MHz f = 900 MHz f = 900 MHz f = 900 MHz f = 1 MHz = 120W PEP, VCE = 24 V VCE = 24 V VCE = 24 V VCE = 24 V VCB = 28 V F= 600KHz (2 tones) ICQ = 2 x 400mA ICQ = 2 x 400mA ICQ = 2 x 400mA ICQ = 2 x 400mA 120 6.0 -- 50 -- -- -- -32 -- -- -- -- -- -- 100 W dB dBc % pF * @ 1 dB Compressi on ** P OU T TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT THERMAL RESISTANCE vs CASE TEMPERATURE 2/7 SD1660 TYPICAL PERFORMANCE (cont'd) COLLECTOR EFFICIENCY vs FREQUENCY BROADBAND POWER GAIN vs FREQUENCY INTERMODULATION DISTORTION vs POWER OUTPUT PHOTOMASTER OF TEST CIRCUIT 3/7 SD1660 TEST CIRCUIT B1, B2 : Coaxial Cable 25.43mm C1, C2 : 330pF, ATC 100B C3 : .8 - 8.0pF Johanson Gigatrim C4 : 4.7 + 3.9pF, ATC 100B C5 : 3.9 + 1.7pF, ATC 100B + .8 - 8.0pF Johanson Gigatrim C6, C7 : 330pF, ATC 100B C8 : 120pF ATC 100B C9 : 1.5nF, ATC 100B C10 : 10nF + 47F, 63V C11 : 1.5nF, ATC 100B + 10nF C12 : 470pF + 1.5nF, ATC 100B + 100mF, 63V Substrate: Teflon Glass, Er = 2.55, 30Mils Thick L1, L18 L2, L17 L3, L16 L4, L15 L5 L6 L7 L8 L9, L10 L11 L12 L13 L14 L19 L20 L21, L22 : : : : : : : : : : : : : : : : Printed Line 50 Printed Line 26.7 10mm Printed Line 60 10.5mm Printed Line 50 43mm Printed Line 25 13.5mm Printed Line 21 15mm Printed Line 10.5 12.5mm Printed Line 8 7.5mm Printed Line 50 10mm Printed Line 9.5 10.5mm Printed Line 11 14.5mm Printed Line 15.5 8.5mm Printed Line 19 3.5mm 2 Turns, #16 AWG 2 Turns, #16 AWG 12 Turns, #22 AWG 4/7 SD1660 BIAS VOLTAGE SOURCE C15 C16 C17 C18 D1 D2 D3 : : : : 10nF + 100nF + 10F 10nF 1F 1.2nF + 27nF + 10F : AAY 49, Ge Diode Thermally Connected with Q3 Heatsink : 1N 4005, SI Diode Thermally Connected with Q3 Heatsink : 1N 4005, SI Diode Thermally Connected with RF Transistors Flange L8, L9 : Ferrite Choke Q3 R7 R8 : BDX 63B : 470, 1/2W : 100, Trimpot 5/7 SD1660 PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0175 6/7 SD1660 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 7/7 |
Price & Availability of SD1660
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |